MOSFET Models for SPICE Simulation: Including BSIM3v3 and BSIM4

图书标准信息

• 作者 William Liu 著
• 出版社 Wiley-IEEE Press
• 出版时间 2001-02
• 版次 1
• ISBN 9780471396970
• 定价 1402.40元
• 装帧 精装
• 开本 其他
• 纸张 其他
• 页数 600页
• 正文语种 英语

【内容简介】

AnexpertguidetounderstandingandmakingoptimumuseofBSIMUsedbymorechipdesignersworldwidethananyothercomparablemodel,theBerkeleyShort-ChannelIGFETModel(BSIM)has,overthepastfewyears,establisheditselfasthedefactostandardMOSFETSPICEmodelforcircuitsimulationandCMOStechnologydevelopment.Yet,untilnow,therehavebeennoindependentexpertguidesortutorialstosupplementthevariousBSIMmanualscurrentlyavailable.Writtenbyanotedexpertinthefield,thisbookfillsthatgapintheliteraturebyprovidingacomprehensiveguidetounderstandingandmakingoptimaluseofBSIM3andBSIM4.DrawinguponhisextensiveexperiencedesigningwithBSIM,WilliamLiuprovidesabriefhistoryofthemodel,discussesthevariousadvantagesofBSIMoverothermodels,andexploresthereasonswhyBSIM3hasbeenadoptedbythemajorityofcircuitmanufacturers.HethenprovidesengineerswiththedetailedpracticalinformationandguidancetheyneedtomasterallofBSIM'sfeatures.He:SummarizeskeyBSIM3componentsRepresentstheBSIM3modelwithequivalentcircuitsforvariousoperatingconditionsProvidesacomprehensiveglossaryofmodelingterminologyListsalphabeticallyBSIM3parametersalongwiththeirmeaningsandrelevantequationsExploresBSIM3'sflawsandprovidesimprovementsuggestionsDescribesallofBSIM4'simprovementsandnewfeaturesProvidesusefulSPICEfiles,whichareavailableonlineattheWileyftpsite

【作者简介】

WILLIAMLIU,PhD,isaseniormemberofthetechnicalstaffatTexasInstruments,wherehehasworkedsinceobtaininghisPhDinelectricalengineeringfromStanfordUniversityin1991.Dr.LiuhasbeenTI'sleadcontactinmentoringthedevelopmentofBSIM4modelequationswithUCBerkeley,andhasbeeninchargeofthemodelingdevelopmentforLDMOS/DEMOSandRF-CMOSinTI'sSPICEModelingLaboratory.Dr.Liuhasauthored/coauthoredfivebookchapters,andhaswrittenmorethanfiftyjournalpapersonmodeling,devicecharacterization,andfabrication.Dr.LiuhasalsopublishedtwobooksonIII-Vdevicetechnologies.Dr.LiuholdssixteenU.S.patentsandisaseniormemberofIEEE.