微电子专业英语

图书标准信息

• 作者 吕红亮 编
• 出版社 电子工业出版社
• 出版时间 2012-09
• 版次 1
• ISBN 9787121177606
• 定价 39.80元
• 装帧 平装
• 开本 16开
• 纸张 胶版纸
• 页数 336页

【内容简介】

本书以英文的形式介绍了微电子学和集成电路设计的相关技术。全书共分四部分：第一部分为半导体物理基础知识，包括晶格结构、能带结构、载流子浓度和输运等；第二部分介绍半导体器件物理基础理论，包括pn结、肖特基二极管、异质结二极管、双极型晶体管和场效应晶体管；第三部分简要阐述半导体集成电路的设计过程和设计方法；第四部分介绍
半导体集成电路的制造工艺。
本书可作为高等学校微电子学、集成电路设计及相关专业的“专业英语”课程的教材，也可作为从事微电子和集成电路相关科研和工程技术人员的参考书。

【目录】

目录

Session1IntroductiontoSemiconductor
1.1WhatisSemiconductor
1.2ClassificationofSemiconductor
ReadingMaterials
Session2CrystalStructure
2.1PrimitiveCellandCrystalPlane
2.2AtomicBonding
ReadingMaterials
Session3BandModel
3.1IntroductiontoQuantumMechanics
3.2Band
3.3EffectiveMassTheory
ReadingMaterials
Session4TheSemiconductorinEquilibrium
4.1ChargeCarriersinSemiconductor
4.2IntrinsicSemiconductor
4.3ExtrinsicSemiconductor
ReadingMaterials
Session5CarrierTransport
5.1OverviewofCarrierTransport
5.2LowFieldTransport
5.3HighFieldTransport
5.4DiffusionCurrent
Session6NonequilibriumExcessCarriersinSemiconductor
6.1Recombination
6.2MinorityCarrierLifetime
6.3AmbipolarTransport
ReadingMaterials
Session7ThepnJunction（Ⅰ）
7.1Introduction
7.2BasicStructureofthepnJunction
7.3EnergyBandsforapnJunction
7.4IdealCurrentVoltageRelationship
7.5CharacteristicsofaPracticalDiode
ReadingMaterials
Session8ThepnJunction（Ⅱ）
8.1BreakdowninpnJunction
8.2SmallSignalDiffusionResistanceofthepnJunction
8.3JunctionCapacitance
8.4DiffusionorStorageCapacitance
8.5DiodeTransients
8.6CircuitModelsforJunctionDiodes
ReadingMaterials
Session9MetalSemiconductorContacts
9.1SchottkyContacts
9.2OhmicContacts
ReadingMaterials
Session10Heterojunctions
10.1StrainandStressatHeterointerfaces
10.2HeterojunctionMaterials
10.3EnergyBandDiagrams
ReadingMaterials.
Session11TheBipolarJunctionTransistor（Ⅰ）
11.1TheBipolarJunctionTransistorConstruction
11.2TransistorAction
11.3NonidealEffects
11.4BaseResistance
ReadingMaterials
Session12TheBipolarJunctionTransistor(Ⅱ)
12.1BreakdownVoltage
12.2FrequencyLimitsofBJT
12.3TheSchottkyClampedTransistor
12.4SmallsignalTransistorModel
ReadingMaterials
Session13BasicsofMOSFETs
13.1Introduction
13.2GeneralCharacteristicsofaMOSFET
13.3MOSSystem
13.4WorkFunctionDifferences
13.5FlatBandVoltage
13.6ThresholdVoltage
ReadingMaterials
Session14NonidealEffectsofMOSFETs
14.1Introduction
14.2EffectiveMobility
14.3VelocitySaturation
14.4ChannellengthModulation
14.5DIBL
14.6HotcarrierEffect
14.7GIDL
ReadingMaterials
Session15AdvancedMOSFETDevices
15.1Introduction
15.2ChannelDopingProfile
15.3GateStack
15.4Source/DrainDesign
15.5SchottkyBarrierSource/Drain
15.6RaisedSource/Drain
15.7SOI
15.8ThreeDimensionalStructure
ReadingMaterials
Session16IntroductiontoIntegratedCircuits
16.1Introduction
16.2SizeandComplexityofIntegratedCircuits
16.3SemiconductorDeviceforIntegratedCircuits
16.4ICDesignProcess
ReadingMaterials
Session17AnalogIntegratedCircuitsDesign
17.1Introduction
17.2AnalogSignalProcessing
17.3CMOSTechnology
17.4Amplifiers
17.5DifferentialAmplifiers
17.6OperationalAmplifiers
17.7CharacterizationofOpAmps
ReadingMaterials
Session18DigitalIntegratedCircuitsDesign
18.1Introduction
18.2TheStaticCMOSInverter
18.3DesigningCombinationalLogicGatesinCMOS
ReadingMaterials
Session19RadioFrequencyIntegratedCircuitsDesign
19.1Introduction
19.2RFSystemPerformanceMetrics
19.3RFTransceiverArchitectures
19.4RFPassiveComponent