纳米结构：理论与模拟（影印版）

图书标准信息

• 作者 [法]狄奈许 著
• 出版社 科学出版社
• 出版时间 2008-06
• 版次 1
• ISBN 9787030220271
• 定价 78.00元
• 装帧 精装
• 开本 16开
• 纸张 胶版纸
• 页数 304页
• 字数 396千字
• 正文语种 英语
• 丛书 纳米科学技术大系

【内容简介】

　　《纳米结构：理论与模拟（影印版）》主要介绍了纳米结构体系中电子结构、介电性质、光学转换、电学输运的基本物理概念、理论方法、重要实验结果及其理论分析与模拟计算，是一本较为系统的、有使用价值的理论专著。纳米科学的进展正在越来越依赖计算与模拟。这取决于三个因素的结合：减小纳米物质的尺寸、增强计算机的能力、发展新的理论。
　　《纳米结构：理论与模拟（影印版）》对从事纳米科技多学科交叉领域的高年级本科生、研究生及相关的科研教学人员具有重要的参考价值。

【目录】

1GeneralBasisforComputationsandTheoreticalModels
1.1AbinitioOne-ParticleTheoriesfortheGroundState
1.1.1Non-interactingNElectronSystem
1.1.2TheHartreeApproximation
1.1.3TheHartree-FockApproximation
1.1.4CorrelationsandExchange-CorrelationHole
1.1.5LocalDensityApproaches
1.2Quasi-particlesandExcitons
1.2.1One-ParticleEigenvalues
1.2.2TheExchange-CorrelationHoleandStaticScreening
1.2.3DynamicallyScreenedInteractions
1.2.4TheGWApproximation
1.2.5Excitons
1.2.6TowardsaMoreQuantitativeTheory
1.2.7Time-DependentDensityFunctionalTheory(TDDFT)
1.3Semi-empiricalMethods
1.3.1TheEmpiricalTightBindingMethod
1.3.2TheEmpiricalPseudopotentialMethod
1.3.3Thek.pDescriptionandEffectiveMasses

2QuantumConfinedSystems
2.1QuantumConfinementandItsConsequences
2.1.1IdealizedQuantumWells
2.1.2IdealizedQuantumWires
2.1.3IdealizedCubicQuantumDots
2.1.4ArtificialAtoms：CaseofSphericalWells
2.1.5ElectronicStructurefromBulktoQuantumDots
2.2ComputationalTechniques
2.2.1k-pMethodandEnvelopeFunctionApproximation
2.2.2TightBindingandEmpiricalPseudopotentialMethods
2.2.3DensityFunctionalTheory
2.3ComparisonBetweenDifferentMethods
2.4EnergyGapofSemiconductorNanocrystals
2.5ConfinedStatesinSemiconductorNanocrystals
2.5.1ElectronStatesinDirectGapSemiconductors
2.5.2ElectronStatesinIndirectGapSemiconductors
2.5.3HoleStates
2.6ConfinementinDisorderedandAmorphousSystems

3DielectricProperties
3.1MacroscopicApproach：TheClassicalElectrostaticTheory
3.1.1BasesoftheMacroscopicElectrostaticTheoryofDielectrics
3.3.4FromMicroscopictoMacroscopicDielectricFunctionfortheBulkCrystal
3.4ConceptofDielectricConstantforNanostructures
3.4.1TheImportanceofSurfacePolarizationCharges
3.4.2DielectricScreeninginQuantumWells
3.4.3DielectricScreeninginQuantumDots
3.4.4GeneralArgumentsontheDielectricResponseinNanostructures
3.4.5Conclusions
3.5ChargingofaNanostructure
3.5.1CaseofaQuantumDot
3.5.2CaseofaQuantumWell

4Quasi-particlesandExcitons
4.1BasicConsiderations
4.2ExcitonsintheEnvelopeFunctionApproximation
4.2.1TheoryofBulkExcitons
4.2.2ExcitonsinQuantumWells
4.2.3ExcitonBindingEnergyinLimitingSituations
4.2.4TheInfluenceofDielectricMismatch
4.3ExcitonsinMoreRefinedSemi-empiricalApproaches
4.3.1GeneralDiscussion
4.3.2ExcitonsinNanocrystalsofDirectGapSemiconductors
4.3.3ExcitonsinSiNanocrystals
4.3.4ScreeningoftheElectron-HoleInteractionandConfigurationInteraction
4.4QuantitativeTreatmentofQuasi-particles
4.4.1GeneralArguments
4.4.2TightBindingGWCalculations
4.4.3Conclusions
4.5QuantitativeTreatmentofExcitons
4.5.1NumericalCalculations
4.5.2InterpretationoftheResults
4.5.3ComparisonwithExperiments
4.6ChargingEffectsandMulti-excitons
4.6.1ChargingEffects：SingleParticleTunnelingThroughSemiconductorQuantumDots
4.6.2Multi-excitons
4.7Conclusion

5OpticalPropertiesandRadiativeProcesses
5.1GeneralFormulation
5.1.1OpticalAbsorptionandStimulatedEmission
5.1.2Luminescence
5.1.3NanostructuresinOpticalCavitiesandPhotonicCrystals
5.1.4CalculationoftheOptical
5.3.1InterbandTransitions
5.3.2IntrabandTransitions
5.3.3TheImportanceofElectron-PhononCoupling
5.4OpticalPropertiesofSiandGeNanocrystals
5.4.1InterbandTransitions
5.4.2IntrabandTransitions

6DefectsandImpurities
6.1HydrogenicDonors
6.1.1EnvelopeFunctionApproximation
6.1.2TightBindingSelf-ConsistentTreatment
6.2DeepLevelDefectsinNanostructures
6.3SurfaceDefects：SiDanglingBonds
6.3.1ReviewofthePropertiesofSiDanglingBonds
6.3.2SiDanglingBondsattheSurfaceofCrystallites
6.3.3DanglingBondDefectsinIII-VandII-VISemiconductorNanocrystals
6.4SurfaceDefects：Self-TrappedExcitons
6.5OxygenRelatedDefectsatSi-SiO2Interfaces

7Non-radiativeandRelaxationProcesses
7.1Multi-phononCaptureatPointDefects
7.2AugerRecombination
7.2.1TheoreticalCalculation
7.2.2ExperimentalEvidenceforAugerRecombination
7.3HotCarrierRelaxation：ExistenceofaPhononBottleneck

8Transport
8.1DescriptionoftheSystemsandoftheBoundaryConditions
8.2WeakCouplingLimit
8.2.1PerturbationTheory
8.2.2OrthodoxTheoryofTunneling
8.3BeyondPerturbationTheory
8.3.1ElasticScatteringFormalism
8.3.2CalculationoftheGreensFunctions
8.4Electron-ElectronInteractionsBeyondtheOrthodoxTheory.
8.4.1Self-ConsistentMean-FieldCalculations
8.4.2TheSelf-ConsistentPotentialProfile
8.4.3TheCoulombBlockadeEffect
8.5TransportinNetworksofNanostructures
8.5.1TunnelingBetweenNanostructures
8.5.2HoppingConductivity
8.5.3CoherentPotentialApproximation
8.5.4ExampleofaNetworkofSiliconNanocrystals
AMatrixElementsoftheRenormalizing
BMacroscopicAveragesinMaxwell’sEquations
CPolarizationCorrection
References
Index