传感材料与传感技术丛书·化学传感器：仿真与建模（第5卷 电化学传感器 下册 影印版）

图书标准信息

• 作者 [摩尔多瓦]科瑞特森科韦（Korotcenkov G.） 编
• 出版社 哈尔滨工业大学出版社
• 出版时间 2015-01
• 版次 1
• ISBN 9787560348995
• 定价 60.00元
• 装帧 平装
• 开本 16开
• 纸张 胶版纸
• 页数 408页
• 正文语种 英语
• 丛书 传感材料与传感技术丛书

【内容简介】

　　Thisseries，ChemicalSensors：SimulationandMod.eling，istheperfectcomplementtoMomentumPress'ssix-volumereferenceseries，ChemicalSensors：FundamentalsofSensingMaterialsandChemicalSensors：ComprehensiveSensorTechnologies，whichpresentdetailedinformationaboutmaterials，technologies，fabrication，andapplicationsofvariousdevicesforchemicalsensing.Chemicalsensorsareintegraltotheautomationofmyriadindustrialprocessesandeverydaymonitoringofsuchactivitiesaspublicsafety，engineperformance，medicaltherapeutics，andmanymore.

【作者简介】

　　GhenadiiKorotcenkov，receivedhisPh.D.inPhysicsandTechnologyofSemiconductorMaterialsandDevicesin1976，andhisHabilitateDegree(Dr.Sci.)inPhysicsandMathematicsofSemiconductorsandDielectricsin1990.ForalongtimehewasaleaderofthescientificGasSensorGroupandmanagerofvariousnationalandinternationalscientificandengineeringprojectscarriedoutintheLaboratoryofMicro-andOptoelectronics，TechnicalUniversityofMoldova.Currently，Dr.KorotcenkovisaresearchprofessorattheGwangjuInstituteofScienceandTechnology，RepublicofKorea.
　　SpecialistsfromtheformerSovietUnionknowDr.Korotcenkov'sresearchresultsinthefieldofstudyofSchottkybarriers，MOSstructures，nativeoxides，andphotoreceiversbasedonGroupIII-Vcompoundsverywell.Hiscurrentresearchinterestsincludematerialsscienceandsurfacescience，focusedonnanostructuredmetaloxidesandsolid-stategassensordesign.Dr.Korotcenkovistheauthororeditorof11booksandspecialissues，11invitedreviewpapers，17bookchapters，andmorethan190peer-reviewedarticles.Heholds18patents，andhehaspresentedmorethan200reportsatnationalandinternationalconferences.
　　Dr.Korotcenkov'sresearchactivitieshavebeenhonoredbyanAwardoftheSupremeCouncilofScienceandAdvancedTechnologyoftheRepublicofMoldova(2004)，ThePrizeofthePresidentsoftheUkrainian，Belarus，andMoldovanAcademiesofSciences(2003)，SeniorResearchExcellenceAwardsfromtheTechnicalUniversityofMoldova(2001，2003，2005)，afellowshipfromtheInternationalResearchExchangeBoard(1998)，andtheNationalYouthPrizeoftheRepublicofMoldova(1980)，amongothers.

【目录】

PREFACE
ABOUTTHEEDITOR
CONTRIBUTORS
PART3:ELECTROCHEMICALBIOSENSORS
7NANOMATERIAL-BASEDELECTROCHEMICALBIOSENSORSN.Jaffrezic-Renault
1Introduction
2Nanomaterials:Fabrication,ChemicalandPhysicalProperties
2.1ConductingNanomaterials
2.2NonconductingNanomaterials:MagneticNanoparticles
3ConceptionandModelingofAmplificationEffectinNanomaterial-BasedEnzymeSensors
3.1AuNPs-BasedAmperometricSensors
3.2CNT-BasedAmperometricSensors
3.3MNP-BasedAmperometricBiosensors
3.4PotentiometricSensors
3.5ConductometricandImpedimetricBiosensors
4ConceptionandModelingofAmplificationEffectinNanomaterial-BasedImmunosensors
4.1AuNP-BasedAmperometricImmunosensors
4.2AuNP-BasedPotentiometricSensors
4.3ImpedimetricSensors
4.4ConductometricSensors
5ConceptionandModelingofAmplificationEffectinNanomaterial-BasedDNABiosensors
5.1AmperometricSensors
5.2ImpedimetricSensors
6Conclusion
References
8ION-SENSITIVEFIELD-EFFECTTRANSISTORSWITHNANOSTRUCTUREDCHANNELSANDNANOPARTICLE-MODIFIEDGATESURFACES:THEORY，MODELINGANDANALYSIS
VK.Khanna
1Introduction
2StructuralConfigurationsoftheNanoscaleISFET
2.1TheNanoporousSiliconISFET
2.2TheCNTISFET
2.3TheSi-NWISFET
3PhysicsoftheSi-NWBiosensor
3.1BasicPrinciple
3.2AnalogywiththeNanocantilever
3.3PreliminaryAnalysisofMicro-ISFETDownscalingtoNano-ISFET
3.4Single-GateandDual-GateNanowireSensors
3.5Energy-BandModeloftheNWSensor
4Nair-AlamModelofSi-NWBiosensors
4.1TheThreeRegionsintheBiosensor
4.2ComputationalApproach
4.3EffectofNanowireDiameter(d)onSensitivityatDifferentDopingDensities,withAirastheSurroundingMedium
4.4EffectofNanowireLength(L)onSensitivityatDifferentDopingDensities,withAirastheSurroundingMedium
4.5EffectoftheFluidicEnvironment
4.6OverallModelImplications
5pHResponseofSiliconNanowiresinTermsoftheSite-BindingandGouy-Chapman-SternModels
6SubthresholdRegimeastheOptimalSensitivityRegimeofNanowireBiosensors
7EffectiveCapacitanceModelforApparentSurpassingoftheNernstLimitbySensitivityoftheDual-GateNWSensor
8TunnelField-EffectTransistorConcept
9RoleofNanoparticlesinISFETGateFunctionalization
……
9BIOSENSORS:MODELINGANDSIMULATIONOFDIFFUSION-LIMITEDPROCESSES
INDEX