• 国外电子信息精品著作:高频CMOS模拟集成电路基础(影印版)
  • 国外电子信息精品著作:高频CMOS模拟集成电路基础(影印版)
  • 国外电子信息精品著作:高频CMOS模拟集成电路基础(影印版)
  • 国外电子信息精品著作:高频CMOS模拟集成电路基础(影印版)
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国外电子信息精品著作:高频CMOS模拟集成电路基础(影印版)

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作者[土耳其]莱布莱比吉(Duran Leblebici)、Ysusf Leblebici 著

出版社科学出版社

出版时间2011-06

版次1

装帧平装

货号A1441

上书时间2024-05-22

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图书标准信息
  • 作者 [土耳其]莱布莱比吉(Duran Leblebici)、Ysusf Leblebici 著
  • 出版社 科学出版社
  • 出版时间 2011-06
  • 版次 1
  • ISBN 9787030315199
  • 定价 60.00元
  • 装帧 平装
  • 开本 16开
  • 纸张 胶版纸
  • 页数 302页
  • 字数 400千字
  • 正文语种 英语
  • 丛书 国外电子信息精品著作
【内容简介】
《高频CMOS模拟集成电路基础(影印版)》以设计为核心理念从基础模拟电路讲述到射频集成电路的研发。系统地介绍了高频集成电路体系的构建与运行,重点讲解了晶体管级电路的工作体系,设备性能影响及伴随响应,以及时域和频域上的输入输出特性。
《高频CMOS模拟集成电路基础(影印版)》适合电子信息专业的高年级本科生及研究生作为RFCMOS电路设计相关课程的教材使用,也适合模拟电路及射频电路工程师作为参考使用。
【目录】
Preface
1ComponentsofanalogCMOSICs
1.1MOStransistors
1.1.1Current-voltagerelationsofMOStransistors
1.1.1.1Thebasiccurrent-voltagerelationswithoutvelocitysaturation
1.1.1.2Current-voltagerelationsundervelocitysaturation
1.1.1.3Thesub-thresholdregime
1.1.2Determinationofmodelparametersandrelatedsecondaryeffects
1.1.2.1Mobility
1.1.2.2Gatecapacitance
1.1.2.3Thresholdvoltage
1.1.2.4Channellengthmodulationfactor
1.1.2.5Gatelength(L)andgatewidth(W)
1.1.3ParasiticsofMOStransistors
1.1.3.1Parasiticcapacitances
1.1.3.2Thehigh-frequencyfigureofmerit
1.1.3.3Theparasiticresistances
1.2Passiveon-chipcomponents
1.2.1On-chipresistors
1.2.2On-chipcapacitors
1.2.2.1Passiveon-chipcapacitors
1.2.2.2Varactors
1.2.3On-chipinductors

2BasicMOSamplifiers:DCandlow-frequencybehavior
2.1Commonsource(groundedsource)amplifier
2.1.1Biasing
2.1.2Thesmall-signalequivalentcircuit
2.2ActivetransistorloadedMOSamplifier(CMOSinverterasanalogamplifier)
2.3Common-gate(grounded-gate)amplifier
2.4Common-drainamplifier(sourcefollower)
2.5Thelongtailedpair
2.5.1Thelargesignalbehaviorofthelongtailedpair
2.5.2Common-modefeedback

3High-frequencybehaviorofbasicamplifiers
3.1High-frequencybehaviorofacommon-sourceamplifier
3.1.1TheR-Cloadcase
3.2Thesourcefolloweramplifieratradiofrequencies
3.3Thecommon-gateamplifierathighfrequencies
3.4Thecascodeamplifier
3.5TheCMOSinverterasatransimpedanceamplifier
3.6MOStransistorwithsourcedegenerationathighfrequencies
3.7High-frequencybehaviorofdifferentialamplifiers
3.7.1TheR-Cloadedlongtailedpair
3.7.2Thefullydifferential,current-mirrorloadedamplifier
3.7.3Frequencyresponseofasingle-endedoutputlongtailedpair
3.7.4Ontheinputandoutputadmittancesofthelongtailedpair
3.8Gainenhancementtechniquesforhigh-frequencyamplifiers
3.8.1Additiveapproach:distributedamplifiers
3.8.2Cascadingstrategiesforbasicgainstages
3.8.3Anexample:theCherry-Hooperamplifier

4Frequency-selectiveRFcircuits
4.1Resonancecircuits
4.1.1Theparallelresonancecircuit
4.1.1.1Thequalityfactorofaresonancecircuit
4.1.1.2Thequalityfactorfromadifferentpointofview
4.1.1.3TheQenhancement
4.1.1.4Bandwidthofaparallelresonancecircuit
4.1.1.5CurrentsofLandCbranchesofaparallelresonancecircuit
4.1.2Theseriesresonancecircuit
4.1.2.1Componentvoltagesinaseriesresonancecircuit
4.2Tunedamplifiers
4.2.1Thecommon-sot/rcetunedamplifier
4.2.2Thitunedcascodeamplifier
4.3Cascadedtunedstagesandthestaggeredtuning
4.4Amplifiersloadedwithcoupledresonancecircuits
4.4.1Magneticcoupling
4.4.2Capacitivecoupling
4.5Thegyrator:avaluabletooltorealizehigh-valueon-chipinductances
4.5.1Parasiticsofanon-idealgyrator
4.5.2Dynamicrangeofagyrat0r-basedinductor
4.6Thelow-noiseamplifier(LNA)
4.6.1Inputimpedancematching
4.6.2BasiccircuitssuitableforLNAs
4.6.3Noiseinamplifiers
4.6.3.1Thermalnoiseofaresistor
4.6.3.2ThermalnoiseofaMOStransistor
4.6.4NoiseinLNAs
4.6.5ThedifferentialLNA

5L-Coscillators
5.1ThenegativeresistanceapproachtoL-Coscillators
5.2ThefeedbackapproachtoL-Coscillators
5.3FrequencystabilityofL-Coscillators
5.3.1Crystaloscillators
5.3.2Thephase-locktechnique
5.3.3Phasenoiseinoscillators

6Analog-digitalinterfaceandsystem-leveldesignconsiderations
6.1Generalobservations
6.2Discrete-timesampling
6.3Influenceofsamplingclockjitter
6.4Quantizationnoise
6.5Converterspecifications
6.5.1Staticspecifications
6.5.2Frequency-domaindynamicspecifications
6.6Additionalobservationsonnoiseinhigh-frequencyICs
AppendixAMobilitydegradationduetothetransversalfield
AppendixBCharacteristiccurvesandparametersofAMS0.35micronNMOSandPMOStransistors
AppendixCBSIM3-v3parametersofAMS0.35micronNMOSandPMOStransistors
AppendixDCurrentsourcesandcurrentmirrors
D.1DCcurrentsources
D.2Frequencycharacteristicsofbasiccurrentmirrors
D.2.1Frequencycharacteristicsfornormalsaturation
D.2.2Frequencycharacteristicsundervelocitysaturation
References
Index
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