国外电子与电气工程技术丛书·模拟电路设计：分立与集成（英文版）

图书标准信息

• 作者 [美]Sergio Franco 著；雷鑑铭 注
• 出版社 机械工业出版社
• 出版时间 2015-01
• 版次 1
• ISBN 9787111489320
• 定价 119.00元
• 装帧 平装
• 开本 16开
• 纸张 胶版纸
• 页数 847页
• 丛书 国外电子与电气工程技术丛书

【内容简介】

　　《国外电子与电气工程技术丛书·模拟电路设计：分立与集成（英文版）》以半导体物理理论为基础，注重阐述模拟电路技术和BiCMOS技术，注重物理概念的诠释，强调模拟电路的分离和和集成设计。全书主要内容有：PN结二极管、双极结型晶体管、MOS场效应晶体管、模拟集成电路构建、模拟集成电路、频率和时间响应、反馈、稳定性和噪声。

【作者简介】

　　SergioFrance，出生在意大利，1980年开始在美国旧金山州立大学电气工程系授课，期间获得了伊利诺伊大学香槟分校博士学位，成为该系荣誉教授。在就任现职之前。Franc0博士拥有广泛的行业经验，在诸如固态物理学、模式识别、集成电路（IC）设计、医学电子、日用电子和汽车电子等领域工作过，发表论文颇丰，Franco博士还是《DesignwithOperationalAmplifiersandAnalogIntegratedCircuits》（McGraw—HillEducation，2014）和《ElectricCiruitFundamentals》（OxfordUniversityPress，1995）两本教科书的作者。

【目录】

Preface
Chapter1DiodesandthepnJunction
1.1TheIdealDiode
1.2BasicDiodeApplications
1.3OperationalAmplifiersandDiodeApplications
1.4Semiconductors
1.5ThepnJunctioninEquilibrium
1.6EffectofExternaIBiasontheSCLParameters
1.7ThepnDiodeEquation
1.8TheReverse.BiasedpnJunction
1.9FOrward.BiasedDiodeCharacteristics
1.10DcAnalysisofpnDiodeCircuits
1.11AcAnalysisofpnDiodeCircuits
1.12Breakdown-RegionOperation
1.13DcPowerSupplies
Appendix1A：SPICEModelsforDiodes
References
Prohiems

Chapter2BipolarJunctionTransistors
2.1PhysicalStructureoftheBJT
2.2BasicBJTOperation
2.3Thef.vCharacteristics0fBJTs
2.4OperatingRegionsandBJTModels
2.5TheBJTasanAmplifier／Switch
2.6Small.SignalOperationoftheBJT
2.7BJTBiasingforAmplifierDesign
2.8BasicBipolarVoltageAmplifiers
2.9BipolarVoltageandCurrentBuffers
Appendix2A：SPICEModelsforBJTs
References
Problems

Chapter3MOSField-E竹ectTransistors
3.1PhysicalStructureoftheMOSFET
3.2TheThresholdVoltageV
3.3Then-ChannelCharacteristic
3.4Thei-vCharacteristicsofMOSFETs
3.5MoSFETsinResistiveDcCircuits
3.6TheMOSFETasanAmplifier／Switch
3.7Small-SignalOperationoftheMOSFET
3.8BasicMOSFETVOItageAmplifiers
3.9MOSFETVoltageandCurrentBufierS
3.10TheCMoSInverter／Amplifier
Appendix3A：SPICEModelsforMOSFETS
References
Problems

Chapter4BuildingBlocksforAnalogIntegratedCircuits
4.1DesignConsiderationsinMonolithicCircuits
4.2BJTCharacteristiCSandModelsRevisited
4.3MoSFETCharacteristiCSandModelsRevisited
4.4Darlington，Cascode，andCascadeConfigurations
4.5DifferentialPairs
4.6Common-ModeRejectionRatioinDifferentialPairs
4.7InputOffsetVoltage／CurrentinDifferentialPairs
4.8CurrentMirrors
4.9DifferentiaiPairswithActiveLoads
4.10BipolarOutputStages
4.11CMOSOutputStages
Appendix4A：EditingSPICENetlists
References
Problems

Chapter5AnalogIntegratedCircuits
5.1ThebtA741OperationalAmplifer
5.2TheTwo-StageCMOSOperationalAmplifier
5.3TheF10lded.CascodeCMOSOperationalAmplifier
5.4VoltageComparators
5.5CurrentandVoltageReferences
5.6Current-ModeIntegratedCircuits
5.7FullyDifferentialOperationalAmplifiers
5.8Switched.CapacitorCircuits
Appendix5A：SPICEMacro—Models
References
Problems

Chapter6FrequencyandTimeResponses
6.1High-FrequencyBJTModel
6.2High-FrequencyMOSFETModel
6.3FrequencyResponseofCE／CSAmplifiers
6.4FrequencyResponseofDifferentialAmplifiers
6.5BipolarVoltageandCurrentBuffers
6.6MOSVoltageandCurrentBUffers
6.7Open-CircuitTime-Constant（OCTC）Analvsis
6.8FrequencyResponseofCascodeAmplifiers
6.9FrequencyandTransientResponsesofOpAmps629
6.10DiodeSwitchingTransients639
6.11BJTSwitchingTransients644
6.12TransientResponseofCMOSGatesandVoltageComparators
Appendix6A：TransferFunctionsandBode
Plots
References
Problems

Chapter7Feedback，Stability，andNoise
7.1Negative-FeedbackBasics
7.2EffectofFeedbackonDistortion-Noise，andBandwidth
7.3FeedbackTopologiesandClosed-LoopI／OResistances
7.4PracticalConfigurationsandtheEffectofLoading
7.5ReturnRatioAnalysis
7.6Blackman’SImpedanceFormulaandInjectionMethods
7.7StabilityinNegative-FeedbackCircuils
7.8Dominant-PoleCompensation
7.9FrequencyCompensationofMonolithicOpAmps
7.10Noise
References
Problems
Index