• 半导体物理学(第2版)
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半导体物理学(第2版)

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作者[德]格伦德曼 著

出版社世界图书出版公司

出版时间2014-07

版次1

装帧平装

上书时间2024-05-14

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图书标准信息
  • 作者 [德]格伦德曼 著
  • 出版社 世界图书出版公司
  • 出版时间 2014-07
  • 版次 1
  • ISBN 9787510077814
  • 定价 149.00元
  • 装帧 平装
  • 开本 24开
  • 纸张 胶版纸
  • 页数 864页
  • 正文语种 英语
【内容简介】
  Semiconductorelectronicsiscommonplaceineveryhousehold.Semiconductordeviceshavealsoenabledeconomicallyreasonablefiber-basedopticalcommunication,opticalstorageandhigh-frequencyamplificationandhaverecentlyrevolutionizedphotography,displaytechnologyandlighting.Alongwiththesetremendoustechnologicaldevelopments,semiconductorshavechangedthewaywework,communicate,entertainandthink.Thetechnologicalprogressofsemiconductormaterialsanddevicesisevolvingcontinuouslywithalargeworldwideeffortinhumanandmonetarycapital.Forstudents,semiconductorsofferarich,diverseandexcitingfieldwithagreattraditionandabrightfuture.
  Thisbookintroducesstudentstosemiconductorphysicsandsemiconductordevices.Itbringsthemtothepointwheretheycanspecializeandentersupervisedlaboratoryresearch.ItisbasedonthetwosemestersemiconductorphysicscoursetaughtatUniversitatLeipziginitsMasterofSciencephysicscurriculum.Sincethebookcanbefollowedwithlittleornopre-existingknowledgeinsolid-statephysicsandquantummechanics,itisalsosuitableforundergraduatestudents.Fortheinterestedreadersomeadditionaltopicsareincludedinthebookthatcanbecoveredinsubsequent,morespecializedcourses.Thematerialisselectedtoprovideabalancebetweenaspectsofsolid-stateandsemiconductorphysics,theconceptsofvarioussemiconductordevicesandmodernapplicationsinelectronicsandphotonics.
【目录】
1Introduction
1.1Timetable
1.2NobelPrizeWinners
1.3GeneralInformation

PartⅠFundamentals
2Bonds
2.1Introduction
2.2CovalentBonds
2.2.1Electron-PairBond
2.2.2sp3Bonds
2.2.3sp2Bonds
2.3IonicBonds
2.4MixedBonds
2.5MetallicBonding
2.6van-der-WaalsBonds
2.7HamiltonOperatoroftheSolid
3Crystals
3.1Introduction
3.2CrystalStructure
3.3Lattice
3.3.1UnitCell
3.3.2PointGroup
3.3.3SpaceGroup
3.3.42DBravaisLattices
3.3.53DBravaisLattices
3.3.6PolycrystallineSemiconductors
3.3.7AmorphousSemiconductors:
3.4ImportantCrystalStructures
3.4.1RocksaltStructure
3.4.2CsC1Structure
3.4.3DiamondStructure
3.4.4ZincblendeStructure
3.4.5WurtziteStructure
3.4.6ChalcopyriteStructure
3.4.7FluoriteStructure
3.4.8DelafossiteStructure
3.4.9PerovskiteStructure
3.4.10NiAsStructure
3.4.11FurtherStructures
3.5Polytypism
3.6ReciprocalLattice
3.6.1ReciprocalLatticeVectors
3.6.2MillerIndices
3.6.3BrillouinZone
3.7Alloys
3.7.1RandomAlloys
3.7.2PhaseDiagram
3.7.3VirtualCrystalApproximation
3.7.4LatticeParameter
3.7.5Ordering
4Defects
4.1Introduction
4.2PointDefects
4.2.1PointDefectTypes
4.2.2Thermodynamics
4.2.3Diffusion
4.2.4DopantDistribution
4.2.5LargeConcentrationEffects
4.3Dislocations
4.3.1DislocationTypes
4.3.2VisualizationofDislocationsbyEtching
4.3.3ImpurityHardening
4.4ExtendedDefects
4.4.1Micro-cracks
4.4.2StackingFaults
4.4.3GrainBoundaries
4.4.4AntiphaseandInversionDomains
4.5Disorder
5MechanicalProperties
5.1Introduction,
5.2LatticeVibrations
5.2.1MonoatomicLinearChain
5.2.2DiatomicLinearChain
5.2.3LatticeVibrationsofaThree-DimensionalCrystal
……
PartⅡSelectedTopics
PartⅢApplications
PartⅣAppendices
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