石墨烯技术前沿丛书--石墨烯薄膜制备【库存书】

图书标准信息

• 作者 青芳竹 编著；李雪松；陈远富
• 出版社 化学工业出版社
• 出版时间 2019-06
• 版次 1
• ISBN 9787122337528
• 定价 88.00元
• 装帧 其他
• 开本 16开
• 纸张 胶版纸
• 页数 234页

【内容简介】

本书根据作者多年的石墨烯薄膜制备经验和研究成果，并结合国内外石墨烯薄膜制备的*研究进展编撰而成。本书主要介绍基于化学气相沉积法的石墨烯薄膜制备技术,首先对石墨烯概念、发展历程和表征进行概括介绍，接着简单介绍化学气相沉积技术，然后系统介绍石墨烯的成核与生长、单晶石墨烯的制备、石墨烯的层数控制，进一步介绍石墨烯薄膜的转移技术以及面向工业应用的石墨烯薄膜规模化制备技术，*后对石墨烯薄膜现有制备技术进行总结，并对石墨烯薄膜的未来发展进行了展望。
  本书对石墨烯薄膜制备技术进行了全面系统的介绍，既方便初学者对该技术快速了解，又能使专业科研与技术人员对该技术有系统深入的认识。希望本书能对石墨烯薄膜制备技术的发展与创新提供启发与指导。

【目录】

第1 章　石墨烯简介/　001

1.1　发展历程                                   001

1.2　结构与性质                                 002

1.3　分类及命名                                 004

1.4　结构表征与性能测量                         005

1.4.1 光学显微分析                             005

1.4.2 拉曼光谱分析                             006

1.4.3 电子显微分析                             007

1.4.4 扫描探针显微分析                         008

1.4.5 其他表征技术                             008

1.4.6 电学性能测量                             008

1.5　石墨烯的应用                               010

1.6　制备方法                                   011

参考文献                                         012

第2 章　化学气相沉积技术/　017

2.1　CVD 的特征、分类及发展                     017

2.1.1 CVD的特征                             017

2.1.2 CVD的分类                             018

2.1.3 CVD的发展                             020

2.2　CVD 反应原理                               021

2.2.1 CVD反应过程                                            

021

2.2.2 CVD反应类型          

                                  022

2.2.3 CVD的热、动力学原理                                     024

2.3　真空技术基础                                                

028

2.3.1 真空的概念及分类                                           028

2.3.2 真空系统抽气过程定量描述                                   029

2.3.3 真空系统及真空泵                                           031

2.3.4 真空测量及真空检漏                                         032

2.4　CVD 系统简介                                                

034

2.4.1 CVD系统的组成                                           034

2.4.2 常见CVD系统                                            

035

2.5　CVD 反应过程控制                                            

040

2.5.1 CVD反应的主要参数                                       040

2.5.2 CVD工艺参数及过程控制                                     041

2.6　CVD 制备石墨烯概述                                           042

2.6.1 CVD制备石墨烯的发展历程                                   042

2.6.2 CVD制备石墨烯的分类                                     044

参考文献                                                          

045

第3 章　石墨烯的成核与生长/　047

3.1　石墨烯CVD 生长过程                                         047

3.2　气相反应                                                    

048

3.3　甲烷的吸附与分解                                            

050

3.4　活性基团                                                     052

3.5　石墨烯的成核                                                

055

3.6　石墨烯单晶的生长形状                                         060

3.6.1 Wulff构型                                                

060

3.6.2 热力学平衡结构                                             060

3.6.3 动力学稳定性和生长行为                                     063

3.6.4 单晶形状的实验结果                                         064

参考文献                                                          

078

第4 章　石墨烯单晶制备/　081

4.1　石墨烯成核密度的控制       

                                 081

4.1.1 基底表面的影响                                            

081

4.1.2 碳杂质的影响                                              

082

4.1.3 温度的影响                                                

086

4.1.4 甲烷和氢气的影响                                           088

4.1.5 限域生长                                                

089

4.1.6 氧的影响                                                

090

4.1.7 基底表面钝化                                              

093

4.1.8 多级生长                                                 094

4.1.9 定位成核                                                

095

4.2　同取向外延生长                                              

098

4.2.1 大面积Cu (111)单晶基底制备                               099

4.2.2 石墨烯的外延生长                                           103

参考文献                                                          

105

第5 章　石墨烯的层数控制/　107

5.1　表面控制生长                                                

108

5.1.1 共生长                                                  

109

5.1.2 面上生长                                                

111

5.1.3 面下生长                                                

121

5.1.4 影响石墨烯层数的因素                                       125

5.2　溶解度控制生长                                              

143

5.2.1 降温速度控制                                               144

5.2.2 容量控制                                                

144

5.2.3 溶解度控制                                                

146

参考文献                                                          

148

第6 章　石墨烯薄膜的转移/　151

6.1　聚合物辅助基底刻蚀法                                         151

6.1.1 PDMS辅助转移                                            

152

6.1.2 PMMA辅助转移                                           154

6.1.3 TRT辅助转移                                             157

6.2　聚合物辅助剥离法                                            

157

6.2.1 机械剥离                                                

158

6.2.2 电化学剥离转移                                            

161

6.3　直接转移法                                                  

166

6.3.1 热层压法                                                

166

6.3.2 静电吸附                                                

167

6.3.3 “面对面”转移                                            

170

6.3.4 自组装层                                                

171

参考文献                                                          

172

第7 章　面向工业应用的石墨烯薄膜制备/　175

7.1　低温制备技术                                                

175

7.1.1 TCVD法                                                

176

7.1.2 PECVD法                                                 188

7.2　非金属基底制备技术                                           193

7.2.1 半导体/绝缘介质基底                                       193

7.2.2 h-BN基底                                                

209

7.2.3 玻璃基底                                                 211

7.2.4 其他半导体或高k介质基底                                   215

7.3　大面积及工业化制备                                           217

7.3.1 片式制备                                                

217

7.3.2 卷对卷制备与转移                                           218

参考文献                                                          

223

第8 章　总结与展望/　228

参考文献                                                          

232