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化合物半导体加工中的表征/材料表征原版系列丛书

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作者(美)布伦德尔//埃文斯//麦克盖尔

出版社哈尔滨工业大学

ISBN9787560342818

出版时间2014-01

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定价68元

货号2805998

上书时间2024-11-04

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商品描述: 导语摘要
化合物半导体加工中的表征一书是为使用化合物半导体材料与设备的科学家与工程师准备的，他们并不是表征专家。在研发与GaAs、GaA1As、LnP及HgCdTe基设备的制造中通常使用的材料与工艺提供常见的分析问题实例。这本布伦德尔、埃文斯、麦克盖尔编著的《化合物半导体加工中的表征》讨论了各种表征技术，深入了解每种技术是如何单独或结合使用来解决与材料相关的问题。这本书有助于选择并应用适当的分析技术在材料与设备加工的各个阶段，如：基体处理、外延生长、绝缘膜沉积、接触组、掺杂剂的引入。

目录
Preface to the Reissue of the Materials Characterization Series
Preface to Series
Preface to the Reissue of Characterization of Compound
Semiconductor Processing
Preface  xiii
Contributors  xv
CHARACTERIZATION OF III-V THIN FILMS FOR ELECTRONIC DEVICES
  1.1  Introduction  1
  1.2  Surface Characterization of GaAs Wafers  2
    Dislocations  3,  Surface Composition and Chemical State  4
  1.3  Ion Implantation  6
  1.4 Epitaxial Crystal Growth  11
  1.5  Summary  13
Ⅲ-V COMPOUND SEMICONDUCTOR FILMS FOROPTICAL APPLICATIONS
  2.1  Introduction  17
  2.2  Growth Rate/LayerThickness  20
    In Situ Growth Monitors  20,  Post-Growth Structural Analysis  22
  2.3  Composition Analysis  23
  2.4  Impurity and Dopant Analysis  27
  2.5  Electrical Properties in Optical Structures  28
  2.6  Optical Properties in Single and Multilayer Structures  33
  2.7  Interface Properties in Multilayer Structures  35
  2.8  Summary  37
CONTACTS
  3.1  Introduction  41
  3.2  In Situ Probes  44
    Surface Preparation and Characterization  44,  Initial Metal Deposition  45,
    Subsequent Metal Deposition  48
  3.3  Unpatterned Test Structures  48
    Electrical Characterization  48,  Concentration Profiling  49,
    Electron Microscopy  49
  3.4  Patterned Test Structures  51
    Barrier Height  51,  Contact Resistance  53,  Morphology  54
DIELECTRIC INSULATING LAYERS
  4.1  Introduction  57
  4.2  Oxides and Oxidation  58
  4.3  HeteromorphicInsulators  60
  4.4  Chemical Modification of GaAs Surfaces  61
  4.5  Indium Phosphide-Insulator Interfaces  64
  4.6  Heterojunction Quasi-Insulator Interfaces  68
  4.7  Epitaxial Fluoride Insulators  72
  4.8  Commentary  74
OTHER COMPOUND SEMICONDUCTOR FILMS
  5.1  Introduction  83
    A Focus on HgCdTe  83,  Objective and Scope  84,  Background  84,
    Representative Device Structure  86
  5.2  Substrates and the CdTe Surface (Interface 1)  86
    Substrate Quality  86,  Substrate Surface Preparation  87
  5.3  Epitaxial HgCdTe Materials (Between Interfaces 2 and 5)  90
    Desired Characteristics of the Active Layers  90,  Composition  90,
    Crystalline Quality  91,  Doping  93,  Minority Carrier Lifetime  96
  5.4  Heterojunction Interfaces (Interface 3)  98
    Advantages of the Heterojunction  98,  Desired Characteristics  98,
    Characterizations  99
  5.5  HgCdTe Surface Preparation (Interfaces 4 and 5)  100
    Importance of the Chemically Etched Surface  100,  Monitoring of the Surface
    Cleanliness by Ellipsometry  101,  Characterization of Thin Native Oxides on HgCdTe by XPS  102,  Surface Analysis by UPS  104
  5.6  Summary  105
DEEP LEVEL TRANSIENT SPECTROSCOPY: A CASE STUDY ON GaAs
  6.1  Introduction  109
  6.2  DLTS Technique: General Features  110
  6.3  Fabrication and Qualification of Schottky Diodes  111
  6.4 DLTS System  114
  6.5  DLTS Measurement Procedure  116
  6.6  Data Analysis  117
    DLTS Spectrum  117,  Activation Energy for Thermal Emission  118,
    Trap Densities  120
  6.7  EL2 Center  121
  6.8  Summary  121
APPENDIX: TECHNIQUE SUMMARIES
  1  Auger Electron Spectroscopy (AES)  127
  2  Ballistic Electron Emission Microscopy (BEEM)  128
  3  Capacitance-Voltage (C-V) Measurements  135
  4  Deep Level Transient Spectroscopy (DLTS)  137
  5  Dynamic Secondary Ion Mass Spectrometry (D-SIMS)  139
  6  Electron Beam Induced Current (EBIC) Microscopy  140
  7  Energy-Dispersive X-Ray Spectroscopy (EDS)  146
  8  Focused Ion Beams (FIBs)  147
  9  Fourier Transform Infrared Spectroscopy (FTIR)  151
  10  Hall Effect Resistivity Measurements  152
  11  Inductively Coupled Plasma Mass Spectrometry (ICPMS)  154
  12  Light Microscopy  155
  13  Low-Energy Electron Diffraction (LEED)  156
  14  Neutron Activation Analysis (NAA)  157
  15  Optical Scatterometry  158
  16  Photoluminescence (PL)  159
  17  Raman Spectroscopy  160
  18  Reflection High-Energy Electron Diffraction (RHEED)  161
  19  Rutherford Backscattering Spectrometry (RBS)  162
  20  Scanning Electron Microscopy (SEM)  163
  21  Scanning Transmission Electron Microscopy (STEM)  164
  22  Scanning Tunneling Microscopy and Scanning Force Microscopy (STM and SFM)  165
  23  Sheet Resistance and the Four Point Probe  166
  24  Spreading Resistance Analysis (SRA)  175
  25  Static Secondary Ion Mass Spectrometry (Static SIMS)  183
  26  Surface Roughness: Measurement, Formation by Sputtering, Impact on Depth Profiling  184
  27  Total Reflection X-Ray Fluorescence Analysis (TXRF)  185
  28  Transmission Electron Microscopy (TEM)  186
  29  Variable-Angle Spectroscopic Ellipsometry (VASE)  187
  30  X-Ray Diffraction (XRD)  188
  31  X-Ray Fluorescence (XRF)  189
  32  X-Ray Photoelectron Spectroscopy (XPS)  190
Index  191

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