现货 New Memory Paradigms: Memristive Phenomena And Neuromorphic Applications: Faraday Discussion [9781788015257]

1715 九五品

库存2件

上海宝山

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作者Royal Society of Chemistry

出版社Royal Society of Chemistry

ISBN9781788015257

出版时间2019-03

装帧精装

纸张其他

页数450页

正文语种英语

上书时间2023-03-09

已实名已认证进店收藏店铺

商品描述: Atomically scaled "smart" devices, artificial intelligence, neuromorphic functions, alternative logic operations and computing, new memory storage paradigms, ultra-fast/bio-inspired/flexible/transparent/energy-efficient nanoelectronics - these contemporary concepts are driving forces for the progressive development of science and technology, mirroring societal expectations and solving its problems. Inspired by the concept of the memristor (memory ] resistor), Redox-based resistive switching Random Access Memories (ReRAM) and Phase Change Memories (PCM) are thought capable of all these operations and functionalities. In addition, researchers aim to use these memristive systems to enable the fundamental properties of life, including order, plasticity, response to stimuli, metabolism, homeostasis, growth, and heredity or reproduction, based on the functionalities of biological systems. This volume, which brings together experts from industry and academia, will cover the fundamentals as well as specific demands and limitations in e.g. materials selection, processing, suitable model systems, technical requirements and the potential device applications, providing a bridge for terminologies, theories, models, and applications. The topics covered in this volume include: Electrochemical metallization ReRAMs (ECM)Valence change ReRAMs (VCM) Phase-change memories (PCM)Synaptic and neuromorphic functions