目录 Preface Acknowledgments 1 Introduction of Varistor Ceramics 1.1 ZnO Varistors 1.2 Fabrication of ZnO Varistors 1.2.1 Preparation of Raw Materials 1.2.2 Sintering of ZnO Varistors 1.3 Microstructure 1.4 Typical Parameters of ZnO Varistors 1.5 History of ZnO Varistors 1.6 Applications of ZnO Varistors 1.7 Alternative Varistor Ceramics 1.8 Ceramic-Polymer Composite Varistors References 2 Conduction Mechanisms of ZnO Varistors 2.1 Introduction 2.2 Basic Concepts in Solid-State Physics 2.2.1 Atomic Energy Level and Energy Band of Crystal 2.2.2 Metal, Semiconductor, and Insulator 2.2.3 Characteristics of Fermi-Dirac Function 2.2.4 Impurity and Defect Energy Level 2.3 Energy Band Structure of a ZnO Varistor 2.3.1 Energy Band Structure of a ZnO Grain 2.3.2 DSB of a ZnO Varistor 2.3.3 Microscopic Origin of DSB 2.3.4 Asymmetric I-V Characteristics of the DSB 2.4 Conduction Mechanism of a ZnO Varistor 2.4.1 Conduction Model Based on Thermionic Emission Process 2.4.2 Minority Carrier Generation Process 2.4.3 The Bypass Effect Model 2.5 Dielectric Characteristics of a ZnO Varistor 2.5.1 Explanation to Dielectric Properties of a ZnO Varistor 2.5.2 Effect of Interfacial Charge Relaxation on Conducting Behavior of ZnO Varistors Under Time-Varying Electric Fields 2.5.3 Determination of Barrier Height and Related Parameters 2.5.4 Determination of Deep Donor Level in the ZnO Varistor 2.5.5 Determination of Grain and Grain Boundary Conductivity References 3 Tuning Electrical Characteristics of ZnO Varistors 3.1 Introduction 3.2 Liquid-Phase Fabrication 3.2.1 Microstructure of ZnO Varistor 3.2.2 Polymorph of Bismuth Oxide 3.2.3 Influence of Bi2O3 Concentration 3.2.4 Volatilization of Bismuth Oxide 3.3 Preparing and Sintering Techniques 3.3.1 Fabrication 3.3.2 Fabrication Stages 3.3.3 Effect of Pores 3.4 Role of Oxygen at the Grain Boundary 3.5 Dopant Effects
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