An introduction of microelectronics
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￥ 70.71 6.0折 ￥ 118 全新
库存2件
广东广州
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作者赵策洲,方舟,陆骐峰
出版社中国科技出版传媒股份有限公司
ISBN9787030397751
出版时间2013-11
装帧平装
开本16开
定价118元
货号8682807
上书时间2023-05-10
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目录
PrefaceChapter1Introduction1.1HistoryofsemiconductordevicesandICs1.2MooresLaw--transistorscaling1.3DieyieldanddiecostReferencesChapter2Semiconductormaterialfundamentals2.1Atomicstructures2.1.1Elementsandelementperiodictable2.1.2Bohrstheory--orbits2.1.3Distributionofelectrons--valenceelectrons2.1.4Chemicalbonds2.2Crystalstructures2.2.1Generalmaterialstructures2.2.2Crystallography--diamondstructureandzincblendestructure2.2.3Crystallographicnotation2.2.4Bohrstheory--energylevelandenergyband2.3Energybandtheory2.3.1Insulator,semiconductorandconductor2.3.2Electronsandholes2.3.3Generationandrecombination2.4Dopingofsemiconductors2.4.1Dopingelements2.4.2Doping:n-type2.4.3Doping:p-type2.4.4Counterdoping2.5Carriersdistribution2.5.1FermifunctionandFermilevel2.5.2Densityofstates2.5.3Electronandholeconcentrations2.6Carrierdriftanddiffusion2.6.1Carrierscattering2.6.2Carrierdrift--driftcurrentsandmobility2.6.3Electricfieldandenergybandbending2.6.4Carrierdiffusion--diffusioncurrentsandEinsteinrelationReferencesChapter3Semiconductordevicefundamentals3.1PNjunction3.1.1Formationofdepletionregion3.1.2Built-inpotential3.1.3Distributionofelectricfieldandelectricpotential3.1.4Effectofappliedvoltage3.1.5Depletioncapacitance3.2Metal-semiconductorcontactsandMOScapacitors3.2.1SchottkydiodeandOhmiccontact3.2.2MOScapacitanceandmeasurement3.2.3MOSenergybanddiagram3.2.4Capacitance--voltagecharacteristics3.3MOSFETs3.3.1Current--voltagecharacteristics3.3.2TypesandcircuitsymbolsofMOSFETs3.3.3SwitchmodelofMOSFETs3.4Bipolarjunctiontransistors3.4.1PNjunction--abriefreview3.4.2BJTstructureandcircuitsymbols3.4.3NPNBJToperation--aqualitativeanalysis3.4.4NPNBJToperation--aquantitativeanalysisReferencesChapter4Semiconductorfabricationfundamentals4.1ICfabricationtechniques4.1.1Thinfilmformation4.1.2Photolithographyandetching4.1.3Doping4.2ICresistoranddiodeprocess4.2.1ICresistor--masksandprocesssteps4.2.2Designrules4.2.3Sheetresistance4.2.4LayoutdesignofanICresistor4.2.5Diode--masksandprocesssteps4.3MOSFETprocess4.3.1NMOSFETprocessflowandlayout4.3.2Localoxidationofsilicon4.3.3CMOSnwellprocessflow4.4BJTprocess4.4.1BJTprocesssteps4.4.2LayoutofanNPNBJTICReferencesChapter5Integratedcircuits--conceptsanddesign5.1NMOSdigitalcircuits5.1.1NMOSdigitalcircuitsanalysis--logicandcalculation5.1.2MOSISdesignrulesforNMOSICs5.1.3LayoutsofNMOSlogicfamilies5.2CMOSdigitalcircuits5.2.1CMOSdigitalcircuitsanalysis5.2.2MOSISdesignrulesforCMOSICs5.2.3MOStransistorsinseries/parallelconnection5.2.4CMOSinverter,NORgatesandNANDgates5.2.5Ratioedlogicandcombinationalequivalentcircuit5.2.6Dynamiccircuits5.3MOSanalogcircuits5.3.1MOSFETactiveresistorsandpotentialdividers5.3.2MOSFETcommon-sourcestages5.3.3CMOSpush-pullamplifiers5.3.4MOSFETcurrentmirrors5.3.5MOSFETdifferentialamplifiersReferencesAppendixIPropertiesofsemiconductormaterialsAppendixIISymbolsandconstantAppendixIIIL-EditQuickGuide
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