半导体物理电子学（第2版 影印）

图书标准信息

• 作者 [美]李（Li S.S.） 著
• 出版社 科学出版社
• 出版时间 2008-02
• 版次 2
• ISBN 9787030209405
• 定价 98.00元
• 装帧 精装
• 开本 16开
• 纸张 胶版纸
• 页数 697页
• 字数 854千字
• 正文语种 英语
• 丛书 国外物理名著系列

【内容简介】

　　本书全面介绍了半导体物理的基本内容，这些内容是理解半导体的物理性质和光电器件制备原理的基础。本书系统性强，合理地安排了物理原理，表征法以及半导体材料和器件的应用等内容，兼顾了物理学家、材料学家和设备工程师的需求。本书反映了半导体技术在过去十年的进步，包括许多新出现并已进入市场的半导体器件。本书适合于电子工程，材料科学，物理和化学工程的研究生，也可供半导体工业的过程工程师和设备工程师参考。

【目录】

Preface
1.ClassificationofSolidsandCrystalStructure
1.1　Introduction
1.2　TheBravaisLattice
1.3　TheCrystalStructure
1.4　MillerIndicesandCrystalPlanes
1.5　TheReciprocalLatticeandBrillouinZone
1.6　TypesofCrystalBindings
1.7　DefectsinaCrystallineSolid
Problems
Bibliography

2.LatticeDynamics
2.1　Introduction
2.2　TheOne-DimensionalLinearChain
2.3　DispersionRelationforaThree-DimensionalLattice
2.4　TheConceptofPhonons
2.5　TheDensityofStatesandLatticeSpectrum
2.6　LatticeSpecificHeat
Problems
References
Bibliography

3.SemiconductorStatistics
3.1　Introduction
3.2　Maxwell-BoltzmannStatistics
3.3　Fermi-DiracStatistics
3.4　Bose-EinsteinStatistics
3.5　StatisticsfortheShallow-ImpurityStatesinaSemiconductor
Problems
Bibliography

4.EnergyBandTheory
4.1　Introduction
4.2　BasicQuantumConceptsandWaveMechanics
4.3　TheBloch-FloquetTheorem
4.4　TheKronig-PenneyModel
4.5　TheNearlyFreeElectronApproximation
4.6　TheTight-BindingApproximation
4.7　EnergyBandStructuresforSomeSemiconductors
4.8　TheEffectiveMassConceptforElectronsandHoles
4.9　EnergyBandStructuresandDensityofStatesforLow-DimensionalSystems
Problems
References
Bibliography

5.EquilibriumPropertiesofSemiconductors
5.1　Introduction
5.2　DensitiesofElectronsandHolesinaSemiconductor
5.3　IntrinsicSemiconductors
5.4　ExtrinsicSemiconductors
5.5　IonizationEnergiesofShallow-andDeep-LevelImpurities
5.6　HallEffect，ElectricalConductivity，andHallMobility
5.7　HeavyDopingEffectsinaDegenerateSemiconductor
Problems
References
Bibliography

6.ExcessCarrierPhenomenoninSemiconductors
6.1　Introduction
6.2　NonradiativeRecombination：TheShockley-Read-HallModel
6.3　Band-to-BandRadiativeRecombination
6.4　Band-to-BandAugerRecombination
6.5　BasicSemiconductorEquations
6.6　TheCharge-NeutralityEquation
6.7　TheHaynes-ShockleyExperiment
6.8　ThePhotoconductivityDecayExperiment
6.9　SurfaceStatesandSurfaceRecombinationVelocity
6.10Deep-LevelTransientSpectroscopyTechnique
6.11SurfacePhotovoltageTechnique
Problems
References
Bibliography
7.TransportPropertiesofSemiconductors
8.ScatteringMechanismsandCarrierMoblitiesinSemiconductors
9.OpticalPropertiesandPhotoelectricEffects
10.Metal-SemiconductorContacts
11.P-nJunctionDiodes
12.SolarCellsandPhotodetectors
13.Light-EmittingDevices
14.BipolarJuctionTransistors
15.Metal-Oxide-SemiconductorField-EffectTransistors
16.High-SpeedⅢ-ⅤSemiconductorDevices
SolutionstoSelectedProblems
Appendix
Index