【85成左右新】模拟电子技术:英文版 (美)Robert L. Boylestad (
【85成左右新】有写过的痕迹但是笔记很少，整体很新，正版，无附件和增值服务等。
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作者(美)Robert L. Boylestad (罗伯特. L
出版社电子工业出版社
ISBN9787121289156
出版时间2016-07
版次1
装帧平装
开本16开
纸张胶版纸
页数608页
字数99999千字
定价89元
货号9787121289156
上书时间2023-08-13
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- 【书非常新，有少许笔记】但不影响阅读，无附件和增值服务等。
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基本信息
书名:模拟电子技术:英文版
定价：89元
作者:(美)Robert L. Boylestad (罗伯特. L. 博伊斯坦), Lou
出版社：电子工业出版社
出版日期：2016-07-01
ISBN：9787121289156
字数：1265000
页码：608
版次：
装帧：平装
开本：16开
商品重量：
编辑推荐
内容提要
本书包括半导体器件基础、二极管及其应用电路、晶体管和场效应管放大电路的基本原理及频率响应、功率放大电路、多级放大电路、差分放大电路、电流源等模拟集成电路的单元电路、反馈电路、模拟集成运算放大器、电压比较器和波形变换电路等。本书对原版教材进行了改编，精简了内容，突出了重点，补充了必要知识点，内容更加新颖和系统化，反映了器件和应用的发展趋势，强调了系统工程的概念。
目录
Chapter 1 Semiconductor Diodes1.1 Introductio1.2 Semiconductor Materials: Ge, Si, and GaAs1.3 Covalent Bonding and Intrinsic Materials1.4 Extrinsic Materials: n-Type and p-Type Materials 1.5 Semiconductor Diode1.6 Ideal Versus Practical1.7 Resistance Levels1.8 Diode Equivalent Circuits1.9 Transition and Diffusion Capacitance1.10 Reverse Recovery Time1.11 Diode Specification Sheets 1.12 Semiconductor Diode Notatio1.13 Zener Diodes1.14 Light-Emitting Diodes1.15 Summary1.16 Computer AnalysisProblems Chapter 2 Diode Applications2.1 Introduction 2.2 Load-Line Analysis2.3 Equivalent Model Analysis2.4 AND/OR Gates2.5 Sinusoidal Inputs; Half-Wave Rectificatio2.6 Full-Wave Rectificatio2.7 Clippers2.8 Clampers2.9 Zener Diodes2.10 SummaryProblemsChapter 3 Bipolar Junction Transistors3.1 Introductio3.2 Transistor Constructio3.3 Transistor Operation 3.4 Common-Base Configuratio3.5 Transistor Amplifying Action 3.6 Common-Emitter Configuratio3.7 Common-Collector Configuratio3.8 Limits of Operatio3.9 Transistor Specification Sheet3.10 Transistor Casing and Terminal Identification 3.11 SummaryProblemsChapter 4 DC Biasing — BJTs4.1 Introductio4.2 Operating Point4.3 Fixed-Bias Circuit 4.4 Emitter Bias4.5 Voltage-Divider Bias4.6 DC Bias with Voltage Feedback 4.7 Miscellaneous Bias Configurations4.8 Transistor Switching Networks 4.9 pnp Transistors4.10 Bias Stabilization 4.11 SummaryProblemsChapter 5 BJT AC Analysis5.1 Introductio5.2 Amplification in the AC Domain 5.3 BJT Transistor Modeling5.4 The re Transistor Model5.5 The Hybrid Equivalent Model5.6 Hybrid Model5.7 Variations of Transistor Parameters5.8 Common-Emitter Fixed-Bias Configuration 5.9 Voltage-Divider Bias5.10 CE Emitter-Bias Configuratio5.11 Emitter-Follower Configuratio5.12 Common-Base Configuratio5.13 Collector Feedback Configuratio5.14 Collector DC Feedback Configuratio5.15 Determining the Current Gai5.16 Effect of RL and Rs5.17 Two-Port Systems Approach 5.18 Summary Table5.19 Cascaded Systems5.20 Darlington Connectio5.21 Feedback Pair5.22 Current Mirror Circuits5.23 Current Source Circuits5.24 Appromate Hybrid Equivalent Circuit5.25 SummaryProblemsChapter 6 Field-Effect Transistors 6.1 Introductio6.2 Construction and Characteristics of JFETs6.3 Transfer Characteristics 6.4 Specification Sheets (JFETs)6.5 Important Relationships6.6 Depletion-Type MOSFET6.7 Enhancement-Type MOSFET6.8 CMOS6.9 Summary Table6.10 SummaryProblems Chapter 7 FET Biasing7.1 Introduction 7.2 Fixed-Bias Configuration 7.3 Self-Bias Configuratio7.4 Voltage-Divider Biasing 7.5 Depletion-Type MOSFETs7.6 Enhancement-Type MOSFETs7.7 Summary Table7.8 Combination Networks7.9 p-Channel Fets7.10 SummaryProblemsChapter 8 FET Amplifiers8.1 Introduction 8.2 FET Small-Signal Model8.3 JFET Fixed-Bias Configuratio8.4 JFET Self-Bias Configuration 8.5 JFET Voltage-Divider Configuratio8.6 JFET Source-Follower(Common-Drain) Configuratio8.7 JFET Common-Gate Configuratio8.8 Depletion-Type MOSFETs8.9 Enhancement-Type MOSFETs8.10 E-MOSFET Drain-Feedback Configuratio8.11 E-MOSFET Voltage-Divider Configuratio8.12 Summary Table 8.13 Effect of RL and Rsig8.14 Cascade Configuratio8.15 SummaryProblemsChapter 9 BJT and FET Frequency Response9.1 Introductio9.2 General Frequency Considerations9.3 Low-Frequency Analysis Bode Plot9.4 Low-Frequency Response BJT Amplifier9.5 Low-Frequency Response FET Amplifier9.6 Miller Effect Capacitance 9.7 High-Frequency Response BJT Amplifier9.8 High-Frequency Response FET Amplifier9.9 Multistage Frequency Effects9.10 SummaryProblemsChapter 10 Operational Amplifiers10.1 Introduction 10.2 Differential Amplifier Circuit10.3 Differential and Common-Mode Operation 10.4 BIFET, BIMOS, and CMOS Differential Amplifier Circuits10.5 Op-Amp Basics10.6 Op-Amp SpecificationsDC Offset Parameters10.7 Op-Amp SpecificationsFrequency Parameters 10.8 Op-Amp Unit Specifications 10.9 SummaryProblems Chapter 11 Op-Amp Applications11.1
作者介绍
Robert L. Boylestad和Louis Nashelsky都是在大学从事电路分析、电子电路基础等相关学科教学的资深教授，在电子电路学科领域出版了多部教材，受到很高的评价。
序言
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